NE6500496(1996) Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

NE6500496
(Rev.:1996)

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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NE6500496

MAXIMUM OPERATION RANDGE

CHARACTERISTIC

Drain to Source Voltage

Channel Temperature

Input Power

Gate Resistance

SYMBOL

VDS

Tch

Gcomp

Rg

MIN.

–

–

–

–

TYP.

10

–

–

–

MAX. UNIT

10

V

130

˚C

3 dBcomp

200

Ω

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

Saturated Drain Current

Pinch-off Voltage

Transconductance

Thermal Resistance

SYMBOL

Idss

VP

gm

Rth

MIN.

1.0

–3.5

–

–

TYP.

2.3

–2.0

1300

6.0

MAX.

3.5

–0.5

–

6.5

UNIT

A

V

mS

˚C/W

TEST CONDITIONS

Vds = 1.5 V, Vgs = 0 V

Vds = 2.5 V, Ids = 15 mA

Vds = 2.5 V, Ids = 1 A

channel to case

PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)

CHARACTERISTIC

Output Power

Gate to Source Current

Power Added Efficiency

Linear Gain

SYMBOL

Pout

Igs

ηadd

GL

MIN.

35.5

–5

–

11.0

TYP.

36.0

–

45

11.5

MAX.

–

5

–

–

UNIT

dBm

mA

%

dB

TEST CONDITIONS

f = 2.3 GHz, Vds = 10 V

Ids ≤ 0.4 A, Pin = 26.0 dBm

Rg = 200 Ω

Pin ≤ 20 dBm (*)

* The other are the same as the above conditions.

2

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