MGF0911A(1997) Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
| MGF0911A Datasheet PDF : 0 Pages | |||
TYPICAL CHARACTERISTICS
12
VDS=3V
Ta=25˚C
ID vs. VGS
8
4
0
-3
-2
-1
0
GATE TO SOURCE VOLTAGE VGS(V)
PO & ηadd vs. Pin
(f=2.3GHz)
45 VDS=10V
ID=2.6A
Gp=11 10 9 dB
40
PO
35
30
50
40
ηadd
30
20
25
10
0
0
20
25
30
35
INPUT POWER Pin(dBm)
MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉
MGF0911A
L, S BAND POWER GaAs FET
ID vs. VDS
12
VGS=-0.5V/Step
Ta=25˚C
8
VGS=0V
4
0
0
1
2
3
4
5
6
DRAIN TO SOURCE VOLTAGE VDS(V)
GLP,P1dB, ID and ηadd vs. VDS
(f=2.3GHz)
13 ID=2.6A
12
11
10
41
39
GLP
P1dB
37
40
20
6
ηadd
8
10
VDS(V)
Nov. ´97
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