MURA130 Ver la hoja de datos (PDF) - ON Semiconductor
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MURA130 Datasheet PDF : 6 Pages
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MURA130, SURA8130, MURA140, NRVUA140V, SURA8140
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA130T3G/SURA8130T3G
MURA140T3G/SURA8140T3G/NRVUA140VT3G/SURA8130T3G−VF01
VRRM
V
VRWM
VR
300
400
Average Rectified Forward Current
@ TL = 150°C
@ TL = 125°C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Condtions Halfwave, Single Phase, 60 Hz)
IF(AV)
A
1.0
2.0
IFSM
A
35
Operating Junction Temperature Range
TJ
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
PsiJL
24
(Note 2)
RθJA
216
Thermal Resistance, Junction−to−Case Top (Note 1)
YJCT
16
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by RθJL) are now referenced as PsiJL.
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
V
1.1
0.89
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 150°C)
iR
μA
5.0
150
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/μs)
trr
ns
65
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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