FDA70N20 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDA70N20 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 6.0 V
101
100
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.06
0.05
0.04
0.03
0
VGS = 10V
VGS = 20V
※ Note : T = 25℃
J
25
50
75
100
125
150
175
200
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
8000
6000
Coss
Ciss
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Crss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 40V
VDS = 100V
8
VDS = 160V
6
4
2
※ Note : ID = 70A
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
FDA70N20 Rev. A
3
www.fairchildsemi.com
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