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74HCT1G14GW-Q100H Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
74HCT1G14GW-Q100H
NXP
NXP Semiconductors. NXP
74HCT1G14GW-Q100H Datasheet PDF : 16 Pages
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Nexperia
74HC1G14-Q100; 74HCT1G14-Q100
Inverting Schmitt trigger
Table 8. Dynamic characteristics …continued
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min Typ Max Min
Max
For type 74HCT1G14-Q100
tpd
propagation delay A to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD
power dissipation VI = GND to VCC 1.5 V
capacitance
[1]
-
17
43
-
-
15
-
-
[2]
-
22
-
-
51 ns
-
ns
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF; VCC = supply voltage in Volts
(CL VCC2 fo) = sum of outputs
13. Waveforms
A input
Y output
VM
tPHL
VM
Measurement points are given in Table 9.
Fig 5. The input (A) to output (Y) propagation delays
Table 9. Measurement points
Type number
Input
74HC1G14-Q100
74HCT1G14-Q100
VI
GND to VCC
GND to 3.0 V
VM
0.5 VCC
1.5 V
tPLH
mna033
Output
VM
0.5 VCC
0.5 VCC
74HC_HCT1G14_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 December 2012
© Nexperia B.V. 2017. All rights reserved
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