STD65N55LF3 Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

STD65N55LF3

N-channel 55 V, 7.0 mΩ, 80 A DPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD65N55LF3

Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 27 V, ID= 32 A,

RG= 4.7 Ω, VGS=10 V

(see Figure 15)

Min. Typ. Max. Unit

10

-

25

50

-

10

ns

-

ns

ns

-

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM

VSD

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)(1)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=65 A, VGS=0

ISD=65 A,

di/dt =100 A/µs,

VDD=30 V, Tj=150 °C

(see Figure 17)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

80 A

-

320 A

-

1.5 V

40

ns

- 60

nC

3

A

Doc ID 16371 Rev 2

5/13

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