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HEF4081B-Q100 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
HEF4081B-Q100
NXP
NXP Semiconductors. NXP
HEF4081B-Q100 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Nexperia
HEF4081B-Q100
Quad 2-input AND gate
6. Functional description
Table 3.
Input
nA
L
L
H
H
Function table[1]
nB
L
H
L
H
[1] H = HIGH voltage level; L = LOW voltage level.
7. Limiting values
Output
nY
L
L
L
H
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5 +18
V
IIK
input clamping current
VI < 0.5 V or VI > VDD + 0.5 V
-
10
mA
VI
input voltage
0.5
VDD + 0.5 V
IOK
output clamping current
VO < 0.5 V or VO > VDD + 0.5 V
-
10
mA
II/O
input/output current
-
10
mA
IDD
supply current
-
50
mA
Tstg
storage temperature
65
+150
C
Tamb
Ptot
ambient temperature
total power dissipation
Tamb = 40 C to + 125 C
40
+125
C
[1] -
500
mW
P
power dissipation
per output
-
100
mW
[1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
8. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
t/V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
input transition rise and fall rate
VDD = 5 V
VDD = 10 V
VDD = 15 V
Min Max
Unit
3
15
V
0
VDD
V
40
+125
C
-
3.75
s/V
-
0.5
s/V
-
0.08
s/V
HEF4081B_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 November 2013
© Nexperia B.V. 2017. All rights reserved
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