NE3511S02-T1D Ver la hoja de datos (PDF) - California Eastern Laboratories.
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NE3511S02-T1D Datasheet PDF : 10 Pages
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NE3511S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
IGSO VGS = −3 V
IDSS VDS = 2 V, VGS = 0 V
VGS (off) VDS = 2 V, ID = 100 µA
gm
VDS = 2 V, ID = 10 mA
NF VDS = 2 V, ID = 10 mA, f = 12 GHz
Ga
MIN. TYP. MAX. Unit
−
0.5
10
µA
20
40
70
mA
−0.2
−0.7
−1.7
V
50
65
−
mS
−
0.30
0.45
dB
12.5
13.5
−
dB
2
Data Sheet PG10642EJ01V0DS
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