STPS8L30 Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
STPS8L30 Datasheet PDF : 7 Pages
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STPS8L30
Characteristics
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak
forward current versus overload
duration (maximum values)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
IM(A)
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values)
IR(mA)
3E+2
1E+2
1E+1
Tj=150°C
Tj=125°C
1E+0
1E-1
Tj=25°C
1E-2
1E-3
0
VR(V)
5
10
15
20
25
30
C(pF)
2000
1000
500
200
100
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
40
3/7
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