F40NF06 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

F40NF06

N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STF40NF06

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

60

V

Zero gate voltage drain

IDSS current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

± 100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250µA

2

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 11.5A

0.024 0.028 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 30V, ID = 11.5A

VDS =25V, f=1 MHz,

VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=48V, ID = 10A

VGS =10V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

12

S

920

pF

225

pF

80

pF

32

nC

6.5 43 nC

15

nC

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Rise Time

td(off)

tf

Turn-off-delay time

Fall time

Test conditions

VDD = 30V, ID = 20A,

RG = 4.7Ω, VGS = 10V

(see Figure 13)

VDD = 30V, ID = 20A,

RG = 4.7Ω, VGS =10V

(see Figure 13)

Min. Typ. Max. Unit

27

ns

11

ns

27

ns

11

ns

4/12

Share Link: