DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FDP20N50F Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FDP20N50F Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
Figure 8. Maximum Safe Operating Area
- FDP20N50F
200
100
10 ï­s
100 ï­s
1 ms
10
10 ms
100 ms
Operation in This Area
DC
1 is Limited by R DS(on)
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 1mA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
800
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
- FDPF20N50FT
200
100
40ï­s
100ï­s
10
1ms
1 Operation in This Area
is Limited by R DS(on)
10ms
0.1
0.01
1
*Notes:
DC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
800
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve - FDP20N50F
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
single pulse
0.002
10-5
10-4
PDM
PDM
t1
t2
t1
t2
*Notes:
1. Zï±JC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * Zï±JC(t)
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
4
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]