FDP20N50F Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

FDP20N50F

N-Channel UniFET™ FRFET® MOSFET 500 V, 20 A, 260 mΩ

Fairchild Semiconductor 

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDP20N50F

Device

FDP20N50F

Package

TO-220

Reel Size

-

Tape Width

-

FDPF20N50FT

FDPF20N50FT

TO-220F

-

-

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

BVDSS

/ TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250A, VGS = 0V, TJ = 25oC

500

ID = 250A, Referenced to 25oC

-

VDS = 500V, VGS = 0V

-

VDS = 400V, TC = 125oC

-

VGS = ±30V, VDS = 0V

-

On Characteristics

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250A

3.0

RDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 10A

-

gFS

Forward Transconductance

VDS = 20V, ID = 10A

-

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 400V, ID = 20A

VGS = 10V

-

-

-

-

-

(Note 4)

-

Switching Characteristics

td(on)

tr

td(off)

tf

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 250V, ID = 20A

RG = 25

-

-

-

(Note 4)

-

Drain-Source Diode Characteristics

IS

Maximum Continuous Drain to Source Diode Forward Current

-

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 20A

-

trr

Reverse Recovery Time

VGS = 0V, ISD = 20A

-

Qrr

Reverse Recovery Charge

dIF/dt = 100A/s

-

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25C

3. ISD 20A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C

4. Essentially Independent of Operating Temperature Typical Characteristics

Typ.

-

0.7

-

-

-

-

0.22

25

2550

350

27

50

14

20

45

120

100

60

-

-

-

154

0.5

Quantity

50

50

Max. Unit

-

-

10

100

±100

V

V/oC

A

nA

5.0

V

0.26



-

S

3390 pF

465

pF

40

pF

65

nC

-

nC

-

nC

100

ns

250

ns

210

ns

130

ns

20

A

80

A

1.5

V

-

ns

-

C

©2011 Fairchild Semiconductor Corporation

2

FDP20N50F/ FDPF20N50FT Rev. C1

www.fairchildsemi.com

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