IPP020N06N Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPP020N06N Datasheet PDF : 9 Pages
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Parameter
Symbol Conditions
IPP020N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=30 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=30 V, V GS=10 V,
-
I D=100 A,
t d(off)
R G,ext,ext=3 W
-
tf
-
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
-
Q g(th)
-
Q gd
V DD=30 V, I D=100 A,
-
Q sw
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
Q oss
V DD=30 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
Reverse recovery time
Reverse recovery charge
t rr
V R=30 V, I F=100 A,
-
Q rr
di F/dt =100 A/µs
-
7800
1800
69
24
45
51
19
9750 pF
2250
138
- ns
-
-
-
35
- nC
22
-
19
25
33
-
106
124
4.5
-V
94
- nC
119
-
-
120 A
-
480
0.9
1.2 V
76
122 ns
97
- nC
5) See figure 16 for gate charge parameter definition
Rev.2.3
page 3
2012-12-20
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