1PS184,135 Ver la hoja de datos (PDF) - NXP Semiconductors.
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1PS184,135 Datasheet PDF : 9 Pages
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NXP Semiconductors
High-speed double diode
Product data sheet
1PS184
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
TYP. MAX. UNIT
see Fig.3
IF = 1 mA
610
IF = 10 mA
740
IF = 50 mA
−
IF = 100 mA
−
see Fig.4
VR = 25 V
−
VR = 80 V
−
VR = 25 V; Tj = 150 °C
−
VR = 80 V; Tj = 150 °C
−
f = 1 MHz; VR = 0; see Fig.5
−
when switched from IF = 10 mA to
−
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.6
when switched from IF = 10 mA;
−
tr = 20 ns; see Fig.7
− mV
− mV
1.0 V
1.2 V
30 nA
0.5 μA
30 μA
100 μA
1.5 pF
4 ns
1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
250
500
UNIT
K/W
K/W
1996 Sep 03
3
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