SPI15N65C3XKSA1 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPI15N65C3XKSA1

CoolMOS Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Dynamic characteristics

Input capacitance

Output capacitance

C iss

C oss

Effective output capacitance, energy

related5)

C o(er)

Effective output capacitance, time

related6)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C o(tr)

t d(on)

tr

t d(off)

tf

V GS=0 V, V DS=25 V,

f =1 MHz

V GS=0 V, V DS=0 V

to 480 V

V DD=400 V,

V GS=10 V, I D=15 A,

R G=6.8 Ω

SPI15N65C3

min.

Values

typ.

Unit

max.

-

1600

- pF

-

540

-

-

67

-

-

120

-

-

32

- ns

-

14

-

-

70

-

-

11

-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Q gs

-

9

- nC

Q gd

V DD=480 V, I D=15 A,

-

29

-

Qg

V GS=0 to 10 V

-

63

V plateau

-

5.4

-V

V SD

V GS=0 V, I F=15 A,

T j=25 °C

t rr

Q rr

V R=480 V, I F=I S,

di F/dt =100 A/µs

I rrm

-

1.0

1.2 V

-

420

- ns

-

8

- µC

-

32

-A

1) J-STD20 and JESD22

2) Limited only by maximum temperature.

3) Pulse width t p limited by T j,max

4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.

5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.0

page 3

2007-09-10

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