FJAFS1510ATU Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FJAFS1510ATU Datasheet PDF : 12 Pages
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Absolute Maximum Ratings(3)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (TC = 25°C)
Operating and Junction Temperature Range
Storage Temperature Range
1550
V
750
V
6
V
6
A
60
W
-55 to +125
°C
-55 to +150
°C
Notes:
3. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Max.
2.08
Unit
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
ICES
ICBO
IEBO
BVEBO
hFE1
hFE2
VCE(sat)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
DC Current Gain
Collector-Emitter Saturation
Voltage
VCB = 1400 V, RBE = 0
VCB = 800 V, IE = 0
VEB = 4 V, IC = 0
IE = 500 μA, IC = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 3 A
IC = 6 A, IB = 1.5 A, TA = 125°C
Cob Output Capacitance
VCB = 200 V, IE = 0, f = 1 MHz
Min.
6
15
7
Typ.
0.5
Max.
100
10
100
Unit
μA
μA
μA
V
V
27
pF
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
2
www.fairchildsemi.com
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