STD10NM50N Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD10NM50N

N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET

STMicroelectronics 

STD10NM50N, STF10NM50N, STP10NM50N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 250 V, ID = 3.5 A

RG = 4.7 Ω VGS = 10 V

(see Figure 17)

Min. Typ. Max. Unit

7.8

ns

4.4

ns

-

-

7.8

ns

12

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 7 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 22)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min Typ. Max Unit

7A

-

28 A

-

1.3 V

177

ns

- 1.4

µC

16

A

216

ns

- 1.7

µC

15.4

A

Doc ID 16929 Rev 3

5/18

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