2SJ494 Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

2SJ494

MOS FIELD EFFECT POWER TRANSISTORS

Renesas Electronics 

2SJ494

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

Drain to Source On-state Resistance

Gate to Source Cutoff Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

SYMBOL

RDS(on)1

RDS(on)2

VGS (off)

| yfs |

IDSS

IGSS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QG

QGS

QGD

VF(S-D)

trr

Qrr

TEST CONDITIONS

VGS = –10 V, ID = –10 A

VGS = –4 V, ID = –10 A

VDS = –10 V, ID = –1 mA

VDS = –10 V, ID = –10 A

VDS = –60 V, VGS = 0

VGS = +20 V, VDS = 0

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –10 A

VGS(on) = –10 V

VDD = –30 V

RG = 10 :

ID = –20 A

VDD = –48 V

VGS = –10 V

IF = 20 A, VGS = 0

IF = 20 A, VGS = 0

di/dt = 100 A/Ps

MIN.

–1.0

8.0

TYP.

39

61

–1.5

15

2360

1060

350

25

160

310

240

74

12

16

1.0

130

290

MAX.

50

88

–2.0

–10

+10

1.5

UNIT

m:

m:

V

S

PA

PA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Switching Time

Test Circuit 2 Gate Charge

D.U.T.

PG.

RG

RG = 10 Ω

VGS

0

t

RL

VDD

VGS

VGS

Wave Form

10 %

0

VGS (on) 90 %

ID

90 %

ID

ID

0 10 %

Wave Form

90 %

10 %

td (on)

tr

td (off)

tf

D.U.T.

IG = 2 mA

PG.

50 Ω

RL

VDD

t = 1 µs

Duty Cycle ≤ 1 %

ton

toff

2

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