SGW20N60 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

SGW20N60

Fast S-IGBT in NPT-Technology

Siemens AG 

Preliminary data

SGP20N60, SGB20N60, SGW20N60

Switching Characteristics, Inductive Load (Diode:BUP602D), at Tj = 25 °C

Parameter

Symbol

Values

min. typ. max.

Characteristics

Turn-on delay time

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

Rise time

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

td(on)

-

24 29

tr

-

38 46

Turn-off delay time

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

Fall time

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

td(off)

- 225 270

tf

-

54 65

Turn-on energy 1)

VCC = 400 V, VGE = 15 V, IC = 20 A,

RGon = 16 Ω

Eon

- 0.87 1

Turn-off energy

VCC = 400 V, VGE = 0 V, IC = 20 A,

RGoff = 16 Ω

Eoff

- 0.33 0.43

Total switching energy 1)

VCC = 400 V, VGE = 0/+15 V, IC = 20 A,

RG = 16 Ω

Ets

-

1.2 1.43

Unit

ns

mJ

1) Eon and Ets include BUP602D diode commutation losses.

Semiconductor Group

4

02 / 1999

Share Link: