SGW20N60 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

SGW20N60

Fast S-IGBT in NPT-Technology

Siemens AG 

SGP20N60, SGB20N60, SGW20N60

Electrical Characteristics, at Tj =25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Characteristics

Transconductance

VCE = 20 V, IC = 20 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

gfs

Ciss

Coss

Crss

-

14

-S

- 1100 1320 pF

- 107 128

-

63 75

Characteristics

Gate charge

VCC = 480 V, VGE = 15 V, IC = 20 A

Internal emitter inductance

measured 5mm from case

QGate

LE

- 100 130 nC

-

7

- nH

Safe Operating Area Characteristics

Short circuit collector current 1)

-

-

-

200 A

VCE ≤ 600 V, VGE = 15 V, tsc ≤ 10 µs,

Tj ≤ 150 °C

Turn off safe operating area

-

-

-

80

VCE ≤ 600 V, Tj ≤ 150 °C

1) allowed number of short circuits: <1000; time between short circuits: >1s

Semiconductor Group

3

02 / 1999

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