K3114 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
K3114 Datasheet PDF : 8 Pages
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SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
10
IAS = 4 A
EAS = 10.7 mJ
1.0
RG = 25 W
VDD = 150 V
® VGS = 20 0 V
m m 0.1 Starting Tch = 25˚C
10
100
1m
10m
L - Inductive Load - H
PACKAGE DRAWINGS (Unit: mm)
Isolated TO-220 (MP-45F)
10.0±0.3
4.5±0.2
φ 3.2±0.2
2.7±0.2
2SK3114
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 150 V
100
RG = 25 W
® VGS = 20 0 V
£ IAS 4 A
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
0.7±0.1
2.54 TYP.
1.3±0.2
2.5±0.1
1.5±0.2
0.65±0.1
2.54 TYP.
1.Gate
2.Drain
3.Source
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D13337EJ2V0DS
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