K3114 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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Fabricante

K3114

K3114, 2SK3114 / MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3114

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics

Symbol

Test Conditions

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

Forward Transfer Admittance

Drain to Source On-state Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QG

QGS

QGD

VF(S-D)

trr

Qrr

VDS = 600 V, VGS = 0 V

VGS = ±30 V, VDS = 0 V

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 2.0 A

VGS = 10 V, ID = 2.0 A

VDS = 10 V

VGS = 0 V

f = 1 MHz

VDD = 150 V, ID = 2.0 A

VGS(on) = 10 V

RG = 10 Ω

RL = 10 Ω

VDD = 450 V

VGS = 10 V

ID = 4.0 A

IF = 4.0 A, VGS = 0 V

IF = 4.0 A, VGS = 0 V

di/dt = 50 A/µs

MIN. TYP. MAX. Unit

100 µA

±10 µA

2.5

3.5

V

1.0 50

S

1.6 2.2

Ω

550

pF

115

pF

13

pF

12

ns

6

ns

35

ns

12

ns

15

nC

4

nC

4.4

nC

0.9

V

1.3

µs

4.3

µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

ID

VDD

IAS BVDSS

VDS

Starting Tch

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VGS

VGS

Wave Form

10%

0

VGS(on) 90%

VDD

ID

90%

ID

ID

0 10%

Wave Form

90%

10%

td(on) tr td(off) tf

ton

toff

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D13337EJ2V0DS

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