K3114 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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K3114 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
FEATURES
• Low on-state resistance:
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)
• Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
• Isolated TO-220 package
5
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±4.0
A
ID(pulse)
±16
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS
4.0
A
EAS
10.7
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1998
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