IXFH10N80P Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH10N80P Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
RthCS
VDS= 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
(TO-220)
(TO-247 & TO-3P)
IXFA10N80P IXFP10N80P
IXFQ10N80P IXFH10N80P
Characteristic Values
Min. Typ. Max
7
11
S
2050
pF
172
pF
16
pF
21
22
62
22
40
12
14
0.50
0.25
ns
ns
ns
ns
nC
nC
nC
0.42 °C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse WidthLlimited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 10A, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 100V
Characteristic Values
Min. Typ. Max
10 A
30 A
1.5 V
200 250 ns
3.0
A
0.6
μC
Note 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
100.0
Fig. 1. Forward-Bias Safe Operating Area
10.0
25µs
100µs
1.0
0.1
10
TJ = 150ºC
TC = 25ºC
Single Pulse
100
VDS - Volts
1ms
1000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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