VEMD6110X01 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VEMD6110X01 Datasheet PDF : 7 Pages
| |||
www.vishay.com
VEMD6110X01
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
IF = 50 mA
VF
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
32
Reverse dark current
VR = 10 V, E = 0
Iro
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
VR = 5 V, f = 1 MHz, E = 0
CD
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
6.7
Angle of half sensitivity
ϕ
Wavelength of peak sensitivity
λp
Range of spectral bandwidth
λ0.5
750
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
TYP.
1
1
12
3.6
356
-3.1
9
0.1
9.5
± 60
950
100
100
MAX.
3
12.4
1050
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
ns
ns
10
100
1
10
VR = 10 V
1
20
40
60
80
100
94 8427 Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0.1
0.01
VR = 5 V
λ = 950 nm
0.001
0.01
0.1
1
10
Ee - Irradiance (mW/cm2 )
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
100
λ = 950 nm
Ee = 1 mW/cm2
10
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
1
0.1
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Rev. 1.1, 03-Jul-15
2
Document Number: 84179
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 