DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SD1423ARA Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza
componentes Descripción
Fabricante
2SD1423ARA
Panasonic
Panasonic Corporation Panasonic
2SD1423ARA Datasheet PDF : 4 Pages
1 2 3 4
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1423A
Silicon NPN epitaxial planar type
For low-frequency amplication
Complementary to 2SB1030A
Features
Package
Optimum for high-density mounting
Code
Allowing supply with the radial taping
NS-B1
Pin Name
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
60
V
1: Emitter
2: Collector
3: Base
Collector-emitter voltage (Base open)
e pe) Emitter-base voltage (Collector open)
c e. d ty Collector current
n d stag tinue Peak collector current
a e cle con Collector power dissipation
lifecy , dis Junction temperature
n u duct typed Storage temperature
VCEO
50
V
VEBO
7
V
IC
0.5
A
ICP
1
A
PC
300
mW
Tj
150
°C
Tstg –55 to +150 °C
te tin ur Pro tinued Electrical Characteristics Ta = 25°C±3°C
ing fo iscon Parameter
Symbol
Conditions
Min Typ Max
in n follow ed d Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
es plan Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
a o clud pe, Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
7
c ed in ce ty Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
tinu nan Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
M is/Discon mainte Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
85
e e, hFE2 VCE = 10 V, IC = 500 mA
40
D anc typ Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
inten nce Transition frequency
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
Ma tena Collector output capacitance
ain (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
1
340
0.6
200
6
15
d m Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(plane 2. *: Rank classication
Unit
V
V
V
mA
mA
V
MHz
pF
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date: October 2008
SJC00429AED
1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]