BF1102,115 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BF1102,115 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
25
handbooIkD, halfpage
(mA)
20
MGS364
15
10
5
0
0
20
40 IG1 (μA) 60
VDS = 5 V; VG2-S = 4 V; Tj = 25 C.
Fig.7 Drain current as a function of gate 1 current;
typical values.
handbook,1h5alfpage
ID
(mA)
10
MGS365
5
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 C.
RG1 = 120 k (connected to VGG); see Fig.20.
Fig.8 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
handbook,3h0alfpage
ID
(mA)
20
RG1 = 47 kΩ
10
68 kΩ
MGS366
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
0
0
2
4
6
8
10
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 C.
RG1 connected to VGG; see Fig.20.
Fig.9 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
20
handbooIkD, halfpage
(mA)
16
12
MGS367
VG1-S = 5 V
4.5 V
4V
3.5 V
3V
8
4
0
0
2
4 VG2-S (V) 6
VDS = 5 V; Tj = 25 C.
RG1 = 120 k (connected to VGG); see Fig.20.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
2000 Apr 11
6
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