BF1102,115 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BF1102,115 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.987
0.981
0.961
0.933
0.899
0.867
0.834
0.805
0.779
0.758
0.740
5.6
11.1
21.9
32.1
42.0
51.1
59.9
67.9
75.7
82.1
89.0
4.069
4.042
3.926
3.778
3.593
3.412
3.216
3.010
2.804
2.656
2.509
173.5
167.0
154.4
142.4
130.6
119.6
109.2
99.0
89.2
80.3
69.9
0.001
0.002
0.005
0.006
0.007
0.007
0.007
0.006
0.007
0.007
0.009
95.4
81.3
75.8
69.6
65.6
64.4
67.5
78.7
92.7
120.7
125.5
s22
MAGNITUDE
(ratio)
0.986
0.983
0.976
0.960
0.945
0.928
0.914
0.901
0.886
0.889
0.890
ANGLE
(deg)
3.0
6.0
12.0
17.7
23.2
29.1
34.1
39.8
45.1
49.7
55.7
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C
f
(MHz)
Fmin
(dB)
opt
(ratio)
800
2
0.621
(deg)
61.61
Rn
()
25.85
2000 Apr 11
10
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