BGA2712 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BGA2712 Datasheet PDF : 13 Pages
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NXP Semiconductors
MMIC wideband amplifier
Product specification
BGA2712
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
Ptot = 200 mW; Ts 90 C
VALUE UNIT
300
K/W
CHARACTERISTICS
VS = 5 V; IS = 12.3 mA; Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
IS
s212
RL IN
RL OUT
s122
NF
BW
K
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
9
f = 100 MHz
20
f = 1 GHz
20
f = 1.8 GHz
20
f = 2.2 GHz
20
f = 2.6 GHz
19
f = 3 GHz
16
f = 1 GHz
12
f = 2.2 GHz
8
f = 1 GHz
17
f = 2.2 GHz
15
f = 1.6 GHz
31
f = 2.2 GHz
36
f = 1 GHz
f = 2.2 GHz
at s212 3 dB below flat gain at 1 GHz 2.8
f = 1 GHz
1.5
f = 2.2 GHz
2.5
f = 1 GHz
3
f = 2.2 GHz
0
at 1 dB gain compression; f = 1 GHz 2
at 1 dB gain compression; f = 2.2 GHz 4
f = 1 GHz
12
f = 2.2 GHz
14
f = 1 GHz
9
f = 2.2 GHz
4
TYP.
12.3
20.8
21.3
22
22
21.2
19.3
14
10
20
18
33
39
3.9
4.3
3.2
2
3
4.8
1.3
0.2
2
10
16
11
6
MAX.
15
22
22
23
23
22
21
4.3
4.7
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
2002 Sep 10
3
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