2SC5939G0L Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SC5939G0L Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5939G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT
/ • Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common base) Crb
e • SSS-Mini type package, allowing downsizing of the equipment
. and automatic insertion through the tape packing
nc d stage ■ Absolute Maximum Ratings Ta = 25°C
cle Parameter
Symbol Rating
Unit
a e lifecy Collector-base voltage (Emitter open) VCBO
15
V
t Collector-emitter voltage (Base open) VCEO
10
V
n u duc Emitter-base voltage (Collector open) VEBO
3
V
ro Collector current
IC
50
mA
te tin ur P Collector power dissipation
PC
100
mW
g fo e . Junction temperature
Tj
125
°C
win typ tion Storage temperature
Tstg −55 to +125 °C
■ Package
• Code
SSSMini3-F2
• Marking Symbol: 1S
• Pin Name
1. Base
2. Emitter
3. Collector
ain onludes foilnlotenancceetyped typed t inform/aen/ ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed inc ed ma tenan tinue type lates o.jp Parameter
Symbol
Conditions
M is tinu lan ain con ed ut ic.c Collector-emitter voltage (Base open)
p m dis tinu abo son Emitter-base voltage (Collector open)
con ed on L na Collector-base cutoff current (Emitter open)
is lan isc UR .pa Forward current transfer ratio
e/D p d ing icon hFE ratio
Dtenanc follow .sem Collector-emitter saturation voltage
in isit ww Transition frequency
Ma e v ://w Collector output capacitance
as ttp (Common base, input open circuited)
VCEO
VEBO
ICBO
hFE
∆hFE
VCE(sat)
fT
Cob
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 4 V, IC = 5 mA
VCE = 4 V, IC = 100 µA
VCE = 4 V, IC = 5 mA
IC = 20 mA, IB = 4 mA
VCE = 4 V, IE = −5 mA, f = 200 MHz
VCB = 4 V, IE = 0, f = 1 MHz
Ple h Reverse transfer capacitance
Crb VCB = 4 V, IE = 0, f = 1 MHz
Min Typ Max Unit
10
V
3
V
1
µA
75
400
0.75
1.6
0.5
V
1.4 1.9 2.7 GHz
1.4
pF
0.45
pF
(Common base)
Collector-base parameter
rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz
11
ps
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
SJC00400AED
1
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