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Número de pieza

componentes Descripción

Fabricante

2SC3585

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

California Eastern Laboratories. 

DDAATTAA SSHHEEEETT

SILICON TRANSISTOR

NE68033

/

2SC3585 JEITA

Part No.

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION

The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed

for use in low-noise and small signal amplifiers from VHF band to UHF

band. The NE68033 / 2SC3585 features excellent power gain with very

low-noise figures. The NE68033 / 2SC3585 employs direct nitride

passivated base surface process (DNP process) which is a proprietary

new fabrication technique which provides excellent noise figures at

high current values. This allows excellent associated gain and very

wide dynamic range.

FEATURES

• NF

• Ga

1.8 dB TYP.

9 dB TYP.

@f = 2.0 GHz

@f = 2.0 GHz

PACKAGE DIMENSIONS

(Units: mm)

2.8±0.2

1.5

0.65

+0.1

−0.15

2

1

3

ABSOLUTE MAXIMUM RATINGS (TA = 25
C)

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage VCEO

10

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

65 to +150
C

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25
C)

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0

A VCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

A VEB = 1 V, IC = 0

DC Current Gain

hFE *

50

100

250

VCE = 6 V, IC = 10 mA

Gain Bandwidth Product

fT

10

GHz VCE = 6 V, IC = 10 mA

Feed-Back Capacitance

Cre **

0.3

0.8

pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain

S21e
2

6.0

8.0

dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz

Maximum Available Gain

MAG

10

dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz

Noise Figure

NF

1.8

3.0

dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz

* Pulse Measurement PW  350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

hFE Classification

Class

R43/Q *

R44/R *

Marking

R43

R44

hFE

50 to 100

80 to 160

* Old Specification / New Specification

R45/S *

R45

125 to 250

Document No. P10361EJ4V1DS00 (4th edition)

Date Published March 1997 N

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