2SC2235-Y(2004) Ver la hoja de datos (PDF) - Toshiba
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2SC2235-Y Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2235
Audio Power Amplifier Applications
Driver Stage Amplifier Applications
2SC2235
Unit: mm
• Complementary to 2SA965.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
120
V
120
V
5
V
800
mA
80
mA
900
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
V (BR) EBO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
IE = 1 mA, IC = 0
hFE
VCE = 5 V, IC = 100 mA
(Note)
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
fT
VCE = 5 V, IC = 100 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
120 ―
―
V
5
―
―
V
80
― 240
―
―
1.0
V
―
―
1.0
V
― 120 ― MHz
―
―
30
pF
1
2004-07-07
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