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J111_D74Z Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
J111_D74Z
Fairchild
Fairchild Semiconductor Fairchild
J111_D74Z Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
V
-35
V
50
mA
-55 to 150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
J111 / J112 /
J113(3)
MMBFJ111 /
MMBFJ112 /
MMBFJ113(4)
Unit
Total Device Dissipation
PD
Derate Above 25°C
625
350
mW
5.0
2.8
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125
°C/W
200
357
°C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
2
www.fairchildsemi.com

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