2SA1298(2007) Ver la hoja de datos (PDF) - Toshiba

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2SA1298
(Rev.:2007)

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

IEBO

V (BR) CEO

V (BR) EBO

VCB = −30 V, IE = 0

VEB = −50 V, IC = 0

IC = −10 mA, IB = 0

IE = −0.1 mA, IC = 0

hFE (1)

VCE = −1 V, IC = −100 mA

(Note)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −1 V, IC = −800 mA

IC = −500 mA, IB = −20 mA

VCE = −1 V, IC = −10 mA

VCE = −5 V, IC = −10 mA

VCB = −10 V, IE = 0, f = 1 MHz

Note: hFE (1) classification O: 100~200, Y: 160~320

2SA1298

Min Typ. Max Unit

⎯

⎯ −0.1 μA

⎯

⎯ −0.1 μA

−25 ⎯

⎯

V

−5

⎯

⎯

V

100

⎯

320

40

⎯

⎯

⎯

⎯

−0.4

V

−0.5

⎯

−0.8

V

⎯ 120 ⎯ MHz

⎯

13

⎯

pF

2

2007-11-01

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