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VS-2N5207(2015) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
VS-2N5207
(Rev.:2015)
Vishay
Vishay Semiconductors Vishay
VS-2N5207 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
SWITCHING
PARAMETER
Maximum non-repetitive
rate of rise of turned-on
current
Typical delay time
SYMBOL
VDM = 25 V to 600 V
VDM = 700 V to 800 V
dI/dt
td
TEST CONDITIONS
TC = 125 °C, VDM = Rated VDRM,
ITM = 2 x dI/dt, gate pulse = 20 V,
15 , tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 125 °C, VDM = 600 V, ITM = 200 A at
400 Hz maximum, gate pulse = 20 V, 15 ,
tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A
DC resistive circuit, gate pulse = 10 V,
40 source, tp = 6 μs, tr = 0.1 μs
2N681-92
100
75
-
1
2N5205-07
-
-
100
1
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
Minimum critical rate of
rise of off-state voltage
dV/dt
Maximum reverse
leakage current
Note
(1) JEDEC registered value
VRRM, VDRM = 400 V
VRRM, VDRM = 500 V
VRRM, VDRM = 600 V
VRRM, VDRM = 700 V
VRRM, VDRM = 800 V
VRRM, VDRM = 1000 V
VRRM, VDRM = 1200 V
IDRM,
IRRM
TEST CONDITIONS
TJ = 125 °C, exponential
to 100 % rated VDRM
TJ = 125 °C, exponential
to 67 % rated VDRM
Gate open
circuited
TJ = 125 °C
2N681-92 2N5205-07 UNITS
100
(typical)
250
(typical)
100 (1)
250
V/μs
3.5
-
3.5
-
2.5
3.3
2.2
-
mA
2
2.5
-
2
-
1.7
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak gate power
PGM
tp < 5 ms for 2N681 series;
tp < 500 μs for 2N5204 series
Maximum average gate power
PG(AV)
Maximum peak positive gate current +IGM
Maximum peak positive gate voltage +VGM
Maximum peak negative gate voltage -VGM
Maximum required DC gate
current to trigger
TC = min.
rated value
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
IGT
TC = 25 °C
TC = 125 °C
Typical DC gate current to trigger
TC = 25 °C, + 6 V anode to cathode
Maximum required DC gate
voltage to trigger
Typical DC gate voltage to trigger
Maximum required gate trigger voltage
TC = - 65 °C is the lowest value which will trigger all
VGT
units with + 6 V anode to cathode
TC = 25 °C
TC = 25 °C, + 6 V anode to cathode
Maximum DC gate voltage
not to trigger
Maximum gate voltage not to trigger is
VGD
TC = 125 °C
the maximum value which will not
trigger any unit with rated VDRM anode
to cathode
2N681-92
5 (1)
0.5 (1)
2 (1)
10 (1)
5 (1)
80 (1)
40
18.5
30
3 (1)
2
1.5
0.25 (1)
2N5205-07
60 (1)
0.5 (1)
2
-
5 (1)
80 (1)
40
20
30
3 (1)
2
1.5
0.25 (1)
UNITS
W
A
V
mA
V
V
Note
(1) JEDEC registered value
Revision: 19-Nov-15
3
Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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