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2N5064(2000) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
2N5064
(Rev.:2000)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2N5064 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA (TO-92) package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200 µA Maximum
Low Reverse and Forward Blocking Current — 50 µA Maximum,
TC = 110°C
Low Holding Current — 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
* Peak Repetitive Off–State Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
VDRM,
VRRM
50 to 60 Hz, Gate Open) 2N5060
30
2N5061
60
2N5062
100
2N5064
200
Unit
Volts
On-State Current RMS
(180° Conduction Angles; TC = 80°C)
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
*Peak Non-repetitive Surge Current,
TA = 25°C
(1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
0.8
0.51
0.255
10
0.4
Amp
Amp
Amps
A2s
v *Forward Peak Gate Power
(Pulse Width 1.0 µsec; TA = 25°C)
*Forward Average Gate Power
(TA = 25°C, t = 8.3 ms)
v *Forward Peak Gate Current
(Pulse Width 1.0 µsec; TA = 25°C)
v *Reverse Peak Gate Voltage
(Pulse Width 1.0 µsec; TA = 25°C)
*Operating Junction Temperature Range
PGM
PG(AV)
IGM
VRGM
TJ
0.1
0.01
1.0
5.0
–40 to
+110
Watt
Watt
Amp
Volts
°C
*Storage Temperature Range
Tstg
–40 to
°C
+150
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 4
http://onsemi.com
SCRs
0.8 AMPERES RMS
30 thru 200 VOLTS
G
A
K
1
23
TO–92 (TO–226AA)
CASE 029
STYLE 10
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5060/D

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