2N5064(2000) Ver la hoja de datos (PDF) - ON Semiconductor
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2N5064 Datasheet PDF : 8 Pages
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2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case(1)
Thermal Resistance, Junction to Ambient
q *Lead Solder Temperature
(Lead Length 1/16″ from case, 10 s Max)
Symbol
RθJC
RθJA
—
Max
75
200
+230*
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current(2)
IDRM, IRRM
(VAK = Rated VDRM or VRRM)
TC = 25°C
—
—
10
µA
TC = 110°C
—
—
50
µA
ON CHARACTERISTICS
*Peak Forward On–State Voltage(3)
(ITM = 1.2 A peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(4)
*(VAK = 7 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)(4)
*(VAK = 7 Vdc, RL = 100 Ohms)
TC = 25°C
TC = –40°C
TC = 25°C
TC = –40°C
VTM
IGT
VGT
—
—
1.7
Volts
µA
—
—
200
—
—
350
—
—
0.8
Volts
—
—
1.2
*Gate Non–Trigger Voltage
(VAK = Rated VDRM, RL = 100 Ohms)
Holding Current(4)
*(VAK = 7 Vdc, initiating current = 20 mA)
TC = 110°C
TC = 25°C
TC = –40°C
VGD
IH
0.1
—
Volts
—
—
—
5.0
mA
—
—
10
Turn-On Time
Delay Time
Rise Time
(IGT = 1 mA, VD = Rated VDRM,
Forward Current = 1 A, di/dt = 6 A/µs
µs
td
—
3.0
—
tr
—
0.2
—
Turn-Off Time
(Forward Current = 1 A pulse,
Pulse Width = 50 µs,
0.1% Duty Cycle, di/dt = 6 A/µs,
dv/dt = 20 V/µs, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
tq
µs
—
10
—
—
30
—
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(Rated VDRM, Exponential)
dv/dt
—
30
—
V/µs
*Indicates JEDEC Registered Data.
(1) This measurement is made with the case mounted “flat side down” on a heat sink and held in position by means of a metal clamp over the
curved surface.
p (2) RGK = 1000 Ω is included in measurement.
(3) Forward current applied for 1 ms maximum duration, duty cycle 1%.
(4) RGK current is not included in measurement.
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