UT8Q1024K8-UWA Ver la hoja de datos (PDF) - Aeroflex UTMC

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componentes Descripción

Fabricante

UT8Q1024K8-UWA

SRAM, high-performance 1M byte (8Mbit) CMOS static RAM

Aeroflex UTMC 

VDD

En

DATA RETENTION MODE

50%

tEFR

VDR > 2.0V

50%

tR

Figure 7. Low VDD Data Retention Waveform

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data Retention Test)

SYMBOL

PARAMETER

VDR

VDD for data retention

IDDR 1,2

Data retention current (per byte)

tEFR1,3

Chip select to data retention time

tR1,3

Operation recovery time

Notes:

1. En = VDD - .2V, all other inputs = VDR or VSS.

2. Data retention current (I DDR) Tc = 25 oC.

3. Not guaranteed or tested.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, TC=-40oC to +125oC)

SYMBOL

PARAMETER

V DD 1

VDD for data retention

tEFR2, 3

Chip select to data retention time

tR2, 3

Operation recovery time

Notes:

1 . Performed at VD D (min) and VD D (max).

2. En = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

MINIMUM

2.0

--

0

tAVAV

MAXIMUM

--

4.0

UNIT

V

mA

ns

ns

MINIMUM

3.0

0

tAVAV

MAXIMUM UNIT

3.6

V

ns

ns

10

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