IXGH32N170A Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH32N170A Datasheet PDF : 5 Pages
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IXGH 32N170A
IXGT 32N170A
Fig. 7. Transconductance
45
40
35 TJ = -40ºC
30
25ºC
125ºC
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80
I C - Amperes
Fig. 9. Dependence of Eoff on Ic
6
RG = 3Ω
5
RG= 15Ω - - - - -
VGE = 15V
4
VCE = 850V
3
TJ = 125ºC
2
TJ = 25ºC
1
0
16
24
32
40
48
56
64
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 850V
IC = 21A
12 IG= 10mA
9
6
3
Fig. 8. Dependence of Eoff on RG
8
TJ = 125ºC
7 VGE = 15V
VCE = 850V
6
IC = 64A
5
4
IC = 32A
3
2
IC = 16A
1
0
5
10
15
20
25
30
R G - Ohms
Fig. 10. Dependence of Eoff on
Tem perature
7
RG = 3Ω
6 RG = 15Ω - - - - -
VGE = 15V
5 VCE = 850V
IC = 64A
4
3
IC = 32A
2
1
IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 12. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
0
10
0
30
60
90
120
150
Q G - nanoCoulombs
0
5 10 15 20 25 30 35 40
VC E - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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