IXGX32N170AH1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGX32N170AH1 Datasheet PDF : 2 Pages
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IXGX 32N170AH1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
16 23
S
3500
pF
310
pF
40
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
155
nC
30
nC
51
nC
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
46
ns
57
ns
260 500 ns
50 100 ns
2.5 4.2 mJ
PLUS247 Outline (IXGX)
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
48
ns
59
ns
4.0
mJ
300
ns
70
ns
3.0
mJ
0.35 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60A, VGE = 0 V, Pulse test,
t ≤ 300 µs, duty cycle d ≤ 2 %
2.4 2.7 V
TJ = 125°C 2.4
V
IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs
50
A
VR = 1200 V
TJ = 125°C 55
A
150
ns
TJ = 125°C 350
ns
0.35 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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