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IXGX32N170H1

High Voltage IGBT with Diode

IXYS CORPORATION 

IXGX 32N170H1

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

PLUS247 Outline (IXGX)

gfs

IC = IC25; VCE = 10 V

Note 2

25 33

S

Cies

Coes

VCE = 25 V, VGE = 0 V, f = 1 MHz

3500

pF

250

pF

Cres

40

pF

Qg

Qge

Qgc

td(on)

E tri

td(off)

tfi

T Eoff

td(on)

E tri

Eon

td(off)

L tfi

Eoff

RthJC

RthCK

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Inductive load, TJ = 25°C

IC = IC90, VGE = 15 V

RG = 2.7 Ω, VCE = 0.8 VCES

Note 3

Inductive load, TJ = 125°C

IC = IC90, VGE = 15 V

RG = 2.7 Ω, VCE = 0.8 VCES

Note 3

155

nC

30

nC

51

nC

45

ns

38

ns

270 500 ns

250 500 ns

15 25 mJ

48

ns

42

ns

6.0

mJ

360

ns

560

ns

22

mJ

0.35 K/W

0.15

K/W

O Reverse Diode (FRED) (Note 4)

S Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IF = 70A, VGE = 0 V, Pulse test,

t ≤ 300 µs, duty cycle d ≤ 2 %

B IRM

IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs

trr

VR = 600 V

2.7 V

50

A

150

ns

O RthJC

0.4 K/W

Notes: 1. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or

increased RG.

4. See DH60-18A and IXGH32N170A datasheets for additional

characteristics

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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