IXGX32N170H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGX32N170H1 Datasheet PDF : 2 Pages
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High Voltage
IGBT with Diode
Advance Technical Information
IXGX 32N170H1
VCES
IC25
VCE(sat)
tfi(typ)
= 1700 V
= 75 A
= 3.3 V
= 290 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
1700
V
E VGES
VGEM
Continuous
Transient
±20
V
±30
V
IC25
TC = 25°C
T IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
75
A
32
A
200
A
SSOA
E (RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
ICM = 90
A
@ 0.8 VCES
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
µs
L PC
TC = 25°C
TJ
TJM
Tstg
350
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
O FC
Mounting force with chip
22...130/5...30 N/lb
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
S Weight
300
°C
6
g
OB Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247 (IXGX)
G
C
E
G = Gate,
E = Emitter,
(TAB)
C = Collector,
TAB = Collector
Features
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
BVCES
VGE(th)
IC = 1mA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
V
5.0 V
ICES
VCE = 0.8 • VCES
TJ = 25°C
VGE = 0 V
Note 1 TJ = 125°C
500 µA
8 mA
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
2.5 3.3 V
3.0
V
© 2003 IXYS All rights reserved
DS99071(07/03)
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