M27C2001-10B1 Ver la hoja de datos (PDF) - STMicroelectronics

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M27C2001-10B1

2 Mbit (256Kb x 8) UV EPROM and OTP EPROM

STMicroelectronics 

M27C2001

Table 7. Read Mode DC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

Symbol

Parameter

Test Condition

Min

ILI

Input Leakage Current

ILO Output Leakage Current

ICC Supply Current

0V ≤ VIN ≤ VCC

0V ≤ VOUT ≤ VCC

E = VIL, G = VIL,

IOUT = 0mA, f = 5MHz

ICC1 Supply Current (Standby) TTL

ICC2 Supply Current (Standby) CMOS

IPP Program Current

VIL

Input Low Voltage

E = VIH

E > VCC – 0.2V

VPP = VCC

–0.3

VIH (2) Input High Voltage

2

VOL Output Low Voltage

IOL = 2.1mA

Output High Voltage TTL

VOH

Output High Voltage CMOS

IOH = –400µA

IOH = –100µA

2.4

VCC – 0.7V

Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.

2. Maximum DC voltage on Output is VCC +0.5V.

Max

±10

±10

30

1

100

10

0.8

VCC + 1

0.4

Unit

µA

µA

mA

mA

µA

µA

V

V

V

V

V

Table 8A. Read Mode AC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

M27V2001

Symbol Alt

Parameter

Test Condition -55 (3)

-70

-80

-90

Unit

Min Max Min Max Min Max Min Max

tAVQV

tACC

Address Valid to

Output Valid

E = VIL, G = VIL

55

70

80

90 ns

tELQV

tCE

Chip Enable Low to

Output Valid

G = VIL

55

70

80

90 ns

tGLQV

tOE

Output Enable Low

to Output Valid

E = VIL

30

35

40

40 ns

tEHQZ (2)

tDF

Chip Enable High to

Output Hi-Z

G = VIL

0 30 0 30 0 30 0 30 ns

tGHQZ (2)

tDF

Output Enable High

to Output Hi-Z

E = VIL

0 30 0 30 0 30 0 30 ns

tAXQX

tOH

Address Transition to

Output Transition

E = VIL, G = VIL

0

0

0

0

ns

Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.

2. Sampled only, not 100% tested.

3. In case of 45ns speed see High Speed AC measurament conditions.

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