SZ1SMB11CAT3G Ver la hoja de datos (PDF) - ON Semiconductor

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SZ1SMB11CAT3G

600 Watt Peak Power Zener Transient Voltage Suppressors

ON Semiconductor 

1SMB10CAT3G Series, SZ1SMB10CAT3G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction−to−Lead

PD

RqJL

3.0

W

40

mW/C

25

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance from Junction−to−Ambient

PD

RqJA

0.55

W

4.4

mW/C

226

C/W

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive

2. 1 square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec

*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

IT

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

I

IPP

VC VBR VRWM IIRT

IIRT

VRWM VBR VC V

IPP

Bi−Directional TVS

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