1SMAXXCAT3G Ver la hoja de datos (PDF) - ON Semiconductor
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1SMAXXCAT3G Datasheet PDF : 5 Pages
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1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
400
W
DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
RqJL
1.5
W
20
mW/°C
50
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5
W
4.0
mW/°C
250
°C/W
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
I
IPP
IT
VC VBR VRWM IR
IR
IT
V
VRWM VBR VC
IPP
Bi−Directional TVS
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