T1851N60TOH Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
T1851N60TOH Datasheet PDF : 11 Pages
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Technische Information /
technical information
Netz-Thyristor
Phase Control Thyristor
T1851N
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltage
VDRM,VRRM
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85 °C
ITRMSM
TC = 85 °C
TC = 70 °C
TC = 55 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter H
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
6000 V
6500 V
7000 V
2880 A
1830 A
2210 A
2550 A
50000 A
48000 A
12500 10³ A²s
11500 10³ A²s
300 A/µs
2000 V/µs
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
300A iF 3500A
v T A B iT C Ln ( iT 1) D iT
Tvj = Tvj max , iT = 3000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
vT
V(TO)
rT
typ.
max.
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
IL
iD, iR
tgd
prepared by: TM
approved by: JP
date of publication: 2011-05-02
revision:
6.0
typ. 2,45 V
Max. 2,65 V
typ. 1,2 V
max. 1,22 V
typ. 0,417 mΩ
Max. 0,477 mΩ
A 0,774
B 0,000186
C -0,0199
D 0,0235
A 0,623
B 0,000271
C 0,0346
D 0,0173
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 500 mA
max.
2 µs
Date of Publication: 2011-05-02
Revision: 6.0
Seite/page: 2/11
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