STL31N65M5 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STL31N65M5

N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL31N65M5

Electrical characteristics

Figure 8. Capacitance variations

C

(pF)

10000

1000

100

10

1

0.1

1

10

100

Figure 9. Output capacitance stored energy

AM16155v1

Eoss (µJ)

AM16159v1

8

7

Ciss

6

5

4

Coss

Crss

VDS(V)

3

2

1

0

0

200

400

600 VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs.

vs. temperature

temperature

VGS(th)

(norm)

1.10

VDS = VGS

ID = 250 µA

AM05459v1

RDS(on)

(norm)

2.1

1.9

VGS = 10 V

ID = 11 A

AM05460v1

1.00

1.7

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 12. Drain-source diode forward

characteristics

Figure 13. Normalized VDS vs. temperature

VSD

(V)

TJ=-50°C

1.2

1.0

AM05461v1

VDS

(norm)

1.08

1.06

1.04

ID = 1mA

AM10399v1

0.8

0.6

TJ=150°C

0.4

0.2

TJ=25°C

0

0 10 20 30 40 50 ISD(A)

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

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