STL31N65M5 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STL31N65M5
STMicroelectronics
STL31N65M5 Datasheet PDF : 17 Pages
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 11 A
STL31N65M5
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±100 nA
3
4
5
V
0.135 0.162 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 1865 - pF
-
45
- pF
-
4
- pF
Co(er)(1)
Co(tr)(2)
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
VGS = 0,
VDS = 0 to 80% V(BR)DSS
-
43
- pF
-
146
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.8
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 11 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
-
45
- nC
-
11.5
- nC
-
20
- nC
1. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
2. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
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DocID025459 Rev 1
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