STU11N65M2(2019) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STU11N65M2
(Rev.:2019)
(Rev.:2019)
STMicroelectronics
STU11N65M2 Datasheet PDF : 27 Pages
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STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
VGS
(V)
12
VDS
10
GIPG110515MQF1LQVG VDS
(V)
VDD = 520 V
600
ID = 7 A
500
8
400
6
300
4
200
2
100
0
0
0 2 4 6 8 10 12 Qg (nC)
Figure 9. Capacitance variations
C
(pF)
GIPG140815MQF1PCVR
10 3
10 2
10 1
C ISS
C OSS
10 0
f = 1 MHz
C RSS
10 -1
10 -1
10 0
10 1
10 2
V DS (V)
Figure 11. Normalized on-resistance vs temperature
R DS(on)
(norm.)
2.2
GIPG110515MQF1LRON
V GS = 10 V
1.8
1.4
1.0
0.6
0.2
-75 -25
25
75
125
T j (°C)
Figure 8. Static drain-source on-resistance
R DS(on)
(Ω)
GIPG140815MQF1PRID
0.624
V GS = 10 V
0.608
0.592
0.576
0
2
4
6
I D (A)
Figure 10. Normalized gate threshold voltage vs
temperature
V GS(th)
(norm.)
1.1
GIPG110515MQF1LVTH
I D = 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25
25
75
125
T j (°C)
Figure 12. Normalized V(BR)DSS vs temperature
V (BR)DSS
(norm.)
1.08
GIPG110515MQF1LBDV
I D = 1 mA
1.04
1.00
0.96
0.92
0.88
-75 -25
25
75
125
T j (°C)
DS10348 - Rev 6
page 6/27
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