7MBR10VKA060-50
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
20
VGE=20V 15V
12V
15
10
10V
5
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
20
Tj=25oC
Tj=150oC
15
Tj=125oC
10
5
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
10.00
1.00
Cies
0.10
Cres
Coes
0.01
0
10
20
30
Collector - Emitter voltage: VCE [V]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
20
VGE=20V
15V
12V
15
10
10V
5
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2
Ic=20A
Ic=10A
Ic=5A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=10A,Tj= 25°C
VCE
VGE
0
-50
-25
0
25
50
Gate charge: Qg [nC]
6